この研究は、携帯電話電磁界によるマウスの精母細胞由来細胞株GC-2のDNA損傷をアルカリコメットアッセイにより調べた。ばく露は、市販のGSM900MHz携帯電話を培養皿の下に置いて行い、待機モード、通話(listen)モード、呼び出中(dialing)モード、呼び出しを受ける(dialed)モードについて実験した。各モードでの放射電力は事前に測定したが、SARについては、人体頭部SARが0.585 W/kg、人の全身SARが0.813 W/kgとの記述があるのみである。対照群、各モードのばく露群(各モードで20分に1回1分間のばく露を24時間断続した)、ポジティブコントロール群(メチルメタンスルホネート投与)の他、dialing中モードばく露群でのばく露前のメラトニンの投与群、非投与群について、ばく露後のDNA損傷を比較した。その結果、listen、dialed、dialingモードばく露群でDNA損傷レベルが有意に上昇した;この3者間では、listenよりdialedおよびdialingモードの方が、DNA損傷レベル上昇が有意に高かった;これは放射電力強度の測定値の大きさの順番と一致していた;メラトニンの事前投与群ではこの影響が小さくなった、などを報告している。
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To examine whether exposure to electromagnetic fields of mobile phones can induce DNA damage in male germ cells of mice and to evaluate the potential protective effect of melatonin.
The following groups of cell cultures were examined: 1.) sham exposure, 2.) mobile phone exposure in "standby mode", 3.) mobile phone exposure "listening mode", 4.) mobile phone exposure "dialed mode", 5.) mobile phone exposure "dialing mode", 6.) mobile phone exposure "dialing mode" + 200 nM melatonin and 7.) positive control (addition of 0.5 mM methyl methanesulfonate, a carcinogen).
ばく露 | パラメータ |
---|---|
ばく露1:
Modulation type:
pulsed
standby mode
|
|
ばく露2:
Modulation type:
pulsed
ばく露時間:
continuous for 1 min every 20 min for 24 h
listening mode
|
|
ばく露3:
Modulation type:
pulsed
ばく露時間:
continuous for 1 min every 20 min for 24 h
dialed mode
|
|
ばく露4:
Modulation type:
pulsed
ばく露時間:
continuous for 1 min every 20 min for 24 h
dialed mode
|
|
Modulation type | pulsed |
---|---|
Duty cycle | 12.5 % |
Repetition frequency | 217 Hz |
Pulse type | rectangular |
ばく露の発生源/構造 |
|
---|---|
ばく露装置の詳細 | mobile phone was placed under the Petri dishes at a distance of 50 mm in the CO2 incubator with its front side facing up towards the bottom of the dish; dishes were located in the middle of the phone at the vertical axis |
Sham exposure | A sham exposure was conducted. |
Additional information | cell phone switched on without any active calls |
測定量 | 値 | 種別 | Method | Mass | 備考 |
---|---|---|---|---|---|
電力密度 | 0.008 µW/cm² | - | 測定値および計算値 | - | ±0.005 |
磁束密度 | 0.0007 µT | mean | 測定値 | - | ±0.0001 (for the 217 Hz component) |
磁束密度 | 0.001 µT | maximum | 測定値 | - | ±0.0002 (for the 217 Hz component) |
SAR | 0.813 W/kg | maximum | - | whole body | according to manufacturer's instructions |
SAR | 0.585 W/kg | maximum | - | partial body | according to manufacturer's instruction (highest value for the human head) |
Modulation type | pulsed |
---|---|
Duty cycle | 12.5 % |
Repetition frequency | 217 Hz |
Pulse type | rectangular |
ばく露の発生源/構造 |
|
---|---|
Sham exposure | A sham exposure was conducted. |
Additional information | a call was receveid (playing music), automatically accepted and ended automatically after 1 min. |
測定量 | 値 | 種別 | Method | Mass | 備考 |
---|---|---|---|---|---|
電力密度 | 5.9 µW/cm² | - | 測定値および計算値 | - | ±1.16 |
磁束密度 | 4.159 µT | mean | 測定値 | - | ±0.627 (for the 217 Hz component) |
磁束密度 | 32.853 µT | maximum | 測定値 | - | ±4.95 (for the 217 Hz component) |
SAR | 0.813 W/kg | maximum | - | whole body | according to manufacturer's instructions |
SAR | 0.585 W/kg | maximum | - | partial body | according to manufacturer's instruction (highest value for the human head) |
Modulation type | pulsed |
---|---|
Duty cycle | 12.5 % |
Repetition frequency | 217 Hz |
Pulse type | rectangular |
ばく露の発生源/構造 |
|
---|---|
Sham exposure | A sham exposure was conducted. |
Additional information | a call was not accepted and ended automatically after 1 min |
測定量 | 値 | 種別 | Method | Mass | 備考 |
---|---|---|---|---|---|
電力密度 | 11.69 µW/cm² | - | 測定値および計算値 | - | ±2,17 |
磁束密度 | 7.631 µT | mean | 測定値 | - | ±1.225 (for the 217 Hz component) |
磁束密度 | 60.728 µT | maximum | 測定値 | - | ±8.874 (for the 217 Hz component) |
SAR | 0.813 W/kg | maximum | - | whole body | according to manufacturer's instructions |
SAR | 0.585 W/kg | maximum | - | partial body | according to manufacturer's instruction (highest value for the human head) |
Modulation type | pulsed |
---|---|
Duty cycle | 12.5 % |
Repetition frequency | 217 Hz |
Pulse type | rectangular |
ばく露の発生源/構造 |
|
---|---|
Sham exposure | A sham exposure was conducted. |
Additional information | outgoing call, but not accepted by the dialed phone for 1 min |
測定量 | 値 | 種別 | Method | Mass | 備考 |
---|---|---|---|---|---|
電力密度 | 12.2 µW/cm² | - | 測定値および計算値 | - | ±1,84 |
磁束密度 | 7.611 µT | mean | 測定値 | - | ±0.667 (for the 217 Hz component) |
磁束密度 | 62.407 µT | maximum | 測定値 | - | ±5.466 (for the 217 Hz component) |
SAR | 0.813 W/kg | maximum | - | whole body | according to manufacturer's instructions |
SAR | 0.585 W/kg | maximum | - | partial body | according to manufacturer's instruction (highest value for the human head) |
The DNA damage was significantly increased in the mobile phone exposed cell cultures (group 3, 4, 5) compared to the sham exposure and the standby mode. Additionally, the DNA damage in the dialed- and dialing mode-exposed cell cultures was significantly higher than in the listen mode-exposed cell cultures. A treatment with melatonin prevented the exposure-related effects.
The data indicate that exposure to electromagnetic fields of mobile phones could induce DNA damage in male germ cells of mice and melatonin could have a protective effect.
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